SemiconNano 2009
Second International Workshop on Epitaxial Growth
and Fundamental Properties of Semiconductor Nanostructures
August 9-14, 2009, Anan National College of Technology, Tokushima, Japan
INVITED-TALKS PROGRAMME
*Only first authors are shown on this programme.
Additional authors' details can be found within the abstracs.
You can access each abstract by clicking the title.
Monday, August 10, 2009
9:00		Registration
		Opening ceremony (Yume-hall, City culture hall)
		Chair: S. Tsukamoto
10:00		President of Anan National College of Technology
10:10		Governor of Tokushima Prefecture
10:20		Mayor of Anan City
Session Mo.I		Keynote session (Yume-hall, City culture hall)
		Chair: N. Koguchi and A. Rastelli
10:30	K-01	Keynote: A Quarter-Century of Quantum Dots: From Science to Practical Implementation
		Yasuhiko Arakawa, The University of Tokyo, Japan
11:15	K-02	Keynote: Atomic scale investigation of growth processes involved in the formation of self-assembled nanostructures
		Paul Koenraad, Eindhoven University of Technology, The Netherlands
12:00		Lunch and moving to Anan National College of Technology
Session Mo.II		Electric structure of nanostructures (Technocenter, Anan National College of Technology)
		Chair: Y. Arakawa
13:30	O-01	Theoretical Studies of Semiconductor Quantum Dot Arrays for Intermediate Band Solar Cells
		Stanko Tomić, STFC Daresbury Laboratory, UK
13:55	O-02	Atomistic Theory of Nanostructures: New Insights and Perspectives
		Gabriel Bester, Max-Planck-Institut für Festkörperforschung, Germany
14:20	O-03	(111)-Grown InGaAs/GaAs Quantum Dots as Ideal Source for Entangled Photon Pairs
		Andrei Schliwa, Technische Universität Berlin, Germany
14:45		Session discussion
14:55		Tea and snack
Session Mo.III		Capping, stacking and alloying
		Chair: P. Koenraad
15:10	O-04	Material Deposition and Reorganization during Growth and Capping of GaAs based Nanostructures
		Holger Eisele, Technische Universität Berlin, Germany
15:35	O-05	Effects of Sb exposure before during and after InAs quantum dot nucleation
		José M. Ripalda, Instituto de Microelectrónica de Madrid, Spain
16:00	O-06	Alloying in Ge-Si:Si(001) Open and Closed Nanocrystalline systems
		Marina Leite, California Institute of Technology, USA
16:25	O-07	Investigation on strain-compensated InGaAs/GaNAs quantum dots grown by atomic hydrogen-assisted RF-MBE
		Ryuji Oshima, The University of Tokyo, Japan
16:50		Session discussion
		Welcome party (Royal Garden Hotel)
17:00		Moving to Royal Garden Hotel
18:00		Welcome party
Tuesday, August 11, 2009
Session Tu.I		Droplet epitaxy
		Chair: K. Deppert
8:30	K-03	Keynote: Self-assembly of Semiconductor Nanostructures on Solid Surface
		Nobuyuki Koguchi, University of Milano-Bicocca, Italy
9:15	O-08	Droplet epitaxy on GaAs (111)A
		Takaaki Mano, National Institute for Materials Science, Japan
9:40	O-09	Surface diffusion of In on GaAs (100) in droplet epitaxy
		Takeshi Noda, National Institute for Materials Science, Japan
10:05	O-10	Fabrication and Optical Properties of Quantum Semiconductor Nanostructures by Droplet Epitaxy
		Stefano Sanguinetti, University of Milano-Bicocca, Italy
10:30		Session discussoin
10:40		Coffee and snack
Session Tu.II		Optical properties
		Chair: S. Sanguinetti
10:55	O-11	Optical Properties of InAs/GaAs Quantum Dots with a GaAs1−xSbx Overgrown Layer
		Jen-Inn Chyi, National Central University, Taiwan
11:20	O-12	Optical Kerr Signals of a GaAs/AlAs Multilayer Cavity with InAs Quantum Dots Embedded in Strain-Relaxed InGaAs layers
		Toshiro Isu, The University of Tokushima, Japan
11:45	O-13	Structural and Optical Studies of GaNAs/GaAs Super Lattices Grown by Modulated Nitrogen Beam Epitaxy
		Shyun Koshiba, Kagawa University, Japan
12:10		Session discussoin
12:20		Lunch and Poster session
Session Tu.III		Nitrogen
		Chair: J. Chyi
14:00	O-14	XPS Study of Nitridation Mechanism of GaAs (001) Surface using RF-radical Source
		Shigeya Naritsuka, Meijo University, Japan
14:25	O-15	Exciton Polarization Splitting of Nitrogen Pairs in GaAs
		Takashi Kita, Kobe University, Japan
14:50	O-16	Polarization properties of photoluminescence from individual isoelectronic traps in nitrogen delta-doped semiconductors: effect of host crystals
		Hiroyuki Yaguchi, Saitama University, Japan
15:15		Session discussoin
15:25		Short break
Session Tu.IV		Growth of III-V quantum dots
		Chair: T. Kita
15:35	O-17	Fabrication of ultra-high density InAs quantum dots on InP(311)B substrates by an accurate strain compensation technique
		Kouichi Akahane, National Institute of Information and Communications Technology, Japan
16:00	O-18	Density Control of Self-Assembled InAs/GaAs Quantum Dots
		Koichi Yamaguchi, The University of Electro-Communications, Japan
16:25	O-19	Withdrawn
16:50		Session discussoin
17:00		Tea and snack
Session Tu.V		Characterization of electronic structure at surface and interface
		Chair: T. Katayama-Yoshida
17:15	O-20	Nano-scale profile of the dielectric constant near surfaces and interfaces: A first-principles approach
		Jun Nakamura, The University of Electro-Communications, Japan
17:40	O-21	Physics of Schottky barrier at metal/high-k-oxide interfaces
		Takashi Nakayama, Chiba University, Japan
18:05	O-22	Mechanism of Electron Accumulation at the Surface of InAs Thin Film Grown by Molecular Beam Epitaxy
		Kiyoshi Kanisawa, NTT Corporation, Japan
18:30		Session discussoin
Wednesday, August 12, 2009
Session We.I		in situ probe
		Chair: K. Yamaguchi
8:30	O-23	Medium Energy Ion Scattering: Atomic Layer Depth Profiling of Semiconductor Nanostructures
		Gavin Bell, The University of Warwick, UK
8:55	O-24	In-situ measurements of nanostructures during metal-organic vapour phase growth of compound semiconductors
		Markus Pristovsek, Technische Universität Berlin, Germany
9:20	O-25	Quantitative characterization of InAs/GaAs(001) quantum dot structures by in situ X-ray diffraction
		Masamitsu Takahashi, Japan Atomic Energy Agency, Japan
9:55		Session discussoin
10:05		Coffee and snack
Session We.II		Nano wires
		Chair: R. Nötzel
10:25		Guidance on Awaodori excusion
	O-26	Withdrawn
10:50	O-27	Epitaxial nanowire structures for generation and harvesting of light
		Knut Deppert, Lund University, Sweden
11:15	O-28	Numerical simulations of VLS heteroepitaxial nanowire growth
		Vivek Shenoy, Brown University, USA
11:40	O-29	Growth of III-V nanowires by selective-area MOVPE and their applications
		Jun-ichi Motohisa, Hokkaido University, Japan
12:05		Session discussion
12:15		Lunch
Session We.III		Theory of spinodal decomposition and growh dynamics
		Chair: J. Mirecki-Millunchick
13:30	O-30	Computational Materials Design for Spinodal Nanotechnology as A New Class of Bottom-up Nanotechnology
		Hiroshi Katayama-Yoshida, Osaka University, Japan
13:55	O-31	Modelling and Efficient Simulation of Strained Epitaxial Growth using Kinetic Monte Carlo
		Peter Smereka, University of Michigan, USA
14:20	O-32	Computational study for growth of GaN on graphite as 3D growth on 2D material
		Akira Ishii, Tottori University, Japan
14:45	O-33	Ab initio-based approach to surface phase diagram calculation for compound semiconductors and its application to epitaxial growth
		Tomonori Ito, Mie University, Japan
15:10		Session discussion
15:20		Tea and snack
Session We.IV		Surface science
		Chair: A. Ishii
15:35	O-34	Theoretical Study of a Strain-Induced Nanostructure at N/Cu(001) Surface
		Shinji Tsuneyuki, The University of Tokyo, Japan
16:00	O-35	Atomic surface structure of alloyed semiconductors
		Joanna Mirecki-Millunchick, University of Michigan, USA
16:25	O-36	Surface investigation of sulphur-terminated GaAs (001) substrate for supported catalysts
		Tomoya Konishi, Anan National College of Technology, Japan
16:50		Session discussion
Excursion I		Awaodori dance festival (Tokushima city)
17:00		Moving to Tokushima city by bus
Thursday, August 13, 2009
Excursion II		Tairyuji temple tour (Gondola riding)
8:00		Moving to Tairyuji temple by bus
Session Th.I		Investigation of nanostructure properties
		Chair: G. Bell
10:30	K-04	Keynote: New Tools for Investigating and Modifying the Structural Properties of Self-Assembled Quantum Dots
		Armando Rastelli, Leibniz Institute for Solid State and Materials Research Dresden, Germany
11:15	O-37	Is “Electronic Growth” Limited to Simple Metals?
		Ilan Goldfarb, Tel Aviv University, Israel
11:40	O-38	X-ray diffraction investigations of SiGe islands grown on pit-patterned Si substrates
		Günther Bauer, Johannes Kepler University, Linz, Austria
12:05		Session discussion
12:15		Lunch
Session Th.II		Site control of nanostructures
		Chair: G. Bauer
13:20	O-39	Tackling Today’s Challenges in Quantum Dot Materials Research: Lateral Ordering, Position, and Number Control
		Richard Nötzel, Eindhoven University of Technology, The Netherlands
13:45	O-40	Evolution of Surface Corrugation during Growth of Self-Assembled InGaAs Quantum Wires on (775)B InP Substrates by Molecular Beam Epitaxy
		Satoshi Shimomura, Ehime University, Japan
14:10	O-41	Site-Controlled InAs Quantum Dots Fabricated by the Nano-Jet Probe Method
		Shunsuke Ohkouchi, NEC Corporation, Japan
14:35	O-42	Site-control of Quantum Dots using Congruent Evaporation Assisted by Electron Beam Irradiation
		Kanji Iizuka, Nippon Institute of Technology, Japan
15:00		Session discussion
15:10		Short break
Session Th.III		Quantum dots beyond III-Vs
		Chair: A. Rastelli
15:20	O-43	Self-assembled Epitaxial Quantum Dots formed by Phase Separation
		Gunther Springholz, Johannes Kepler University, Austria
15:45	O-44	Synthesis, properties and assembly of shape- and composition-controlled colloidal nanocrystals
		Liberato Manna, Fondazione Istituto Italiano di Tecnologia, Italy
16:10	O-45	Semiconductor nanocrystallites synthesized by pulsed laser ablation in reactive background gases and application to functional materials
		Takehito Yoshida, Anan National College of Technology, Japan
16:35		Session discussion
16:45		Tea and snack
Session Th.IV		Nitrides
		Chair: M. Pristovsek
17:00	O-46	Ammonothermal method of truly bulk GaN growth
		Yasuo Kanbara, Nichia Corporation, Japan
17:25	O-47	Heteroepitaxial InN on GaN(0001): Interface, Strain, and Island Formation
		Mao Hai Xie, The University of Hong Kong, China
17:50	O-48	Novel InN/GaN QWs Consisting of One Monolayer-thick InN Wells Embedded in GaN Matrix
		Akihiko Yoshikawa, Chiba University, Japan
18:15	O-49	Nucleation of catalyst-induced GaN nanowires investigated by in-situ monitoring
		Lutz Geelhar, Paul-Drude-Institut für Festkörperelektronik, Germany
18:50		Closing
Friday, August 14, 2009
Excursion III		Himeji castle tour (UNESCO World Heritage)
10:00		Moving to Himeji, Hyogo by bus
INVITED-POSTERS PROGRAMME
Tuesday, August 11, 12:20-14:00
	P-01	The Art of InAs/GaAs(001) MBE without buffer layer growth observed by STM
		Faebian Bastiman, The University of Sheffield, UK
	P-02	Competitive growth of GaAs zinc-blende islands and wurtzite nanowires on Si
		Steffen Breuer, Paul-Drude-Institut für Festkörperelektronik, Germany
	P-03	Real Time Observation of (2×1) Domain on InP (001) Surface During Step-Flow Growth
		Seiji Fujikawa, Japan Atomic Energy Agency, Japan
	P-04	In-situ spectroscopic ellipsometry monitoring of InN deposition processes on Ga-polarity GaN
		Naoki Hashimoto, Chiba University, Japan
	P-05	Local Photothermal Spectroscopic Measurements on Polycrystalline Silicon Solar Cells by Atomic Force Microscopy
		Kenji Hara, The University of Tokyo, Japan
	P-06	RF-MBE Growth and Evaluation of GaN(As)/ GaAs Super Lattices on Silicon Substrates
		Tomohiko Hirashima, Kagawa University, Japan
	P-07	Inter-wire coupling of the Ga-substituted Mn atomic wire on GaAs(110)
		Motoi Hirayama, The University of Electro-Communications, Japan
	P-08	RHEED observation of organopalladium catalyst on S-terminated GaAs(001)-(2x6) surface
		Takuma Ishikawa, Anan National College of Technology, Japan
	P-09	Development of CIP-Level Set Method for Interface Capturing Simulation
		Hironori Ishimoto, Anan National College of Technology, Japan
	P-10	Withdrawn
	P-11	Size-dependent exciton g-factor in self-assembled InAs/InP quantum dots
		Niek Kleemans, Eindhoven University of Technology, The Netherlands
	P-12	Ripening of InAs Quantum Dots on GaAs:Si investigated with in-situ STM during MOVPE
		Raimund Kremzow, Technische Universität Berlin, Germany
	P-13	Theoretical Analysis of Time-Resolved Photothermal Divergence Signal on GaAs substrate
		Minoru Yamamoto, The University of Tokushima, Japan
	P-14	Laser-pulsed Atom Probe Tomography – A Novel Tool for the Ex-situ Analysis of Semiconductor Nanostructures
		Michael Müller, University of Oxford, UK
	P-15	Monolithic Selective-area Growth of Two-Color InAs QDs with a Rotational Metal Mask for Integrated Optical Devices
		Nobuhiko Ozaki, University of Tsukuba, Japan
	P-16	MBE Growth of InAs/GaAs Quantum Dots on Ge(001) Substrates
		Takashi Seo, The University of Electro-Communications, Japan
	P-17	Growth mechanism of GaAs Concentric Multiple Quantum Rings fabricated by Droplet Epitaxy
		Claudio Somaschini, University of Milano-Bicocca, Italy
	P-18	Towards an understanding of the electronic structure of InAsSb quantum dots
		Alfonso Taboada, Instituto de Microelectrónica de Madrid, Spain
	P-19	Molecular Beam Epitaxy of InAs Quantum Dots Embedded in Strain-Relaxed InGaAs Layers
		Tomoya Takahashi, The University of Tokushima, Japan
	P-20	Growth of multi-stacked InAs/GaNAs strain-compensated quantum dots on GaAs (001)
		Ayami Takata, The University of Tokyo, Japan
	P-21	in situ STM Observation of InAs Quantum Dot on GaAs(001) Surface
		Teruki Teraoka, Anan National College of Technology, Japan
	P-22	in situ STM observation of InAs wetting layer grown by MBE
		Takashi Toujyou, Anan National College of Technology, Japan
	P-23	Scanning Probe Microscopy observation on GaAs(110) cleaved surface
		Nobutomo Uehara, Anan National College of Technology, Japan
	P-24	Theoretical investigation on the structural stability of III-V nanowires with two different types of facets
		Tomoki Yamashita, Mie University, Japan
	P-25	Patterning of the GaAs Substrate by Electron Beam Induced Deposition Method
		Hiroshi Yokota, Nippon Institute of Technology, Japan
	P-26	Structure determination of Pd-catalyst supported on S-terminated GaN (0001) using DFT calculation
		Mami Yokoyama, Tottori University, Japan